| PART |
Description |
Maker |
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF
1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8）紫外线存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储
512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8）紫外线存储器和OTP存储
512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储
SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储
CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20
CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
Fuses, 100mA 250V SB 5X15 BULK
CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85
CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2
CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8200UF 450V ELECT SCREW TERM
GLASS TUBE FOR DS80 IRON PKG/4
SERV SWITCH USB COAX CPU CABLES 50 FT
SERV SWITCH USB COAX CPU CABLES 35 FT
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDIP28
64K X 8 OTPROM, 100 ns, PDSO28
64K X 8 OTPROM, 150 ns, PQCC32
64K X 8 OTPROM, 120 ns, PDIP28
64K X 8 OTPROM, 120 ns, PQCC32
64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W102 |
1Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM(1Mb低压UV EPROM和OTP EPROM)
|
意法半导
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| M27C64A M27C64A-15C1TR M27C64A-15C1X M27C64A-15C6T |
512 Kbit 32Kb x16 OTP EPROM
64K (8K x 8) UV EPROM and OTP ROM
From old datasheet system
3.3-V 12-Bit Universal Bus Driver with Parity Checker and Dual 3-State Outputs 56-TVSOP -40 to 85
3.3-V 12-Bit Universal Bus Driver with Parity Checker and Dual 3-State Outputs 56-SSOP -40 to 85
3.3-V 12-Bit Universal Bus Driver with Parity Checker and Dual 3-State Outputs 56-TSSOP -40 to 85
18-Bit Universal Bus Driver With 3-State Outputs 56-SSOP -40 to 85
Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85 64千位× 8紫外KB的EPROM的和OTP存储
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM 64千位× 8紫外KB的EPROM的和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C1001-12XBTR M27C1001-12XFTR M27C1001-25XBTR M2 |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位128千位× 8）紫外线存储器和OTP存储
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位28千位× 8）紫外线存储器和OTP存储
|
意法半导
STMicroelectronics N.V.
|
| M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
|
STMicroelectronics
|
| M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
| MC68HC711E20VFS2 MC68HC711E9VFS2 MC68HC711E9VFN2 M |
Microcontroller, 2 MHz, RAM=768, ROM=0, EPROM=20K, EEPROM=512
Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
Microcontroller, 3 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
|
Motorola
|
| M27C256B06 M27C256B-90XF6TR M27C256B M27C256B-10B1 |
256 Kbit (32Kb × 8) UV EPROM and OTP EPROM
256 Kbit (32Kb 】 8) UV EPROM and OTP EPROM
|
http://
STMICROELECTRONICS[STMicroelectronics]
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
